View SST11LP12-QCF_8592353.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

a microchip technology company ?2012 silicon storage technology, inc. ds75047a 01/12 data sheet www.microchip.com features ? high gain ? high linear output power: C meets 802.11a ofdm spectrum mask requirements up to 24 dbm over the entire band C added evm <3% up to 20 dbm for 54 mbps 802.11a signal C meets 802.11n ht40 spectrum mask requirements typ- ically up to 20 dbm ? high power-added efficiency/low operating cur- rent for 6 mbps 802.11a applications C ~17% @ p out = 23 dbm for 6 mbps ? built-in ultra-low i ref power-up/down control Ci ref <3 ma ? low idle current C ~150 ma i cq ? high speed power up/down C turn on/off time (10%~90%) <100 ns C typical power-up/down delay with driver delay included <200 ns ? high temperature stability ? low shut-down current (~2 a) ? on-chip power detection ? 20 db dynamic range on-chip power detection ? simple input/output matching ? packages available C 16-contact wqfn (3mm x 3mm) C non-pb (lead-free) packages available applications ? wlan (ieee 802.11a/n) ? japan wlan ? hyperlan2 ? multimedia 4.9-5.9 ghz high-linearity power amplifier sst11lp12 sst11lp12 is a high-power, high-gain power amplifier based on the highly-reli-able ingap/gaas hbt technology. it is configured for high-power, high-efficiency applications with high power-added efficiency while operating over the entire 802.11a frequency band for u.s., european, and japanese markets (4.9-5.9 ghz). the power amplifier ic features easy board-level usage along with high- speed power-up/down control and is offered in a 16-contact wqfn package downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 2 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company product description sst11lp12 is a high-power, high-gain power amplifier based on the highly-reliable ingap/gaas hbt technology. the sst11lp12 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the entire 802.11a frequency band for u.s., european, and japanese markets (4.9-5.9 ghz). the sst11lp12 has excellent linearity, typically <3% added evm at 20 dbm output power which is essential for 54 mbps 802.11a operation while meeting 802.11a spectrum mask at 24 dbm. sst11lp12 also has wide- range (>20 db), temperature-stable (~1 db over 85c), single-ended/differential power detectors which lower users cost on power control. the power amplifier ic also features easy board-level usage along with high-speed power-up/down control. ultra-low reference current (total i ref <3 ma) makes the sst11lp12 controllable by an on/off switching signal directly from the baseband chip. these features coupled with low operating current make the sst11lp12 ideal for the final stage power amplification in battery-powered 802.11a wlan transmitter and access point applica- tions. the sst11lp12 is offered in 16-contact wqfn package. see figure 2 for pin assignments and table 1 for pin descriptions. downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 3 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company functional blocks figure 1: functional block diagram 2 56 8 16 vcc1 15 1 14 vcc3 vcc2 49 11 1210 13 nc nc vrefvref det_ref ncrfout rfout det nc 3 rfinrfin vccb bias circuit 7 1278 b1.1 downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 4 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company pin assignments figure 2: pin assignments for 16-contact wqfn pin descriptions table 1: pin description symbol pin no. pin name type 1 1. i=input, o=output function gnd 0 ground the center pad should be connected to rf ground with several low inductance, low resistance vias. nc 1 no connection unconnected pin rfin 2 i rf input, dc decoupled rfin 3 i rf input, dc decoupled vccb 4 power supply pwr supply voltage for bias circuit nc 5 no connection unconnected pin vref 6 pwr current control vref 7 pwr current control det_ref 8 o on-chip power detector reference det 9 o on-chip power detector rfout 10 o rf output rfout 11 o rf output nc 12 no connection unconnected pin nc 13 no connection unconnected pin vcc3 14 power supply pwr power supply, 3rd stage vcc2 15 power supply pwr power supply, 2nd stage vcc1 16 power supply pwr power supply, 1st stage t1.1 75047 56 8 16 vcc1 15 14 vcc3 vcc2 9 11 1210 13 nc ncrfout rfout det 2 14 3 nc rfinrfin vccb 7 1278 16-wqfn p1.0 top view (contacts facing down) rf and dc gnd 0 nc vrefvref det_ref downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 5 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company electrical specifications the ac and dc specifications for the power amplifier interface signals. refer to table 3 for the dc voltage and current specifications. refer to figures 3 through 8 for the rf performance. absolute maximum stress ratings (applied conditions greater than those listed under absolute maximum stress ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. exposure to absolute maximum stress rating con- ditions may affect device reliability.) supply voltage at pins 4, 14, 15, 16 (v cc ) .................................. -0.3v to +4.8v dc supply current (i cc )...................................................... 500ma operating temperature (t a ) ............................................ -40oc to +85oc storage temperature (t stg )........................................... -40oc to +120oc maximum junction temperature (t j ) ........................................... +150oc surface mount solder reflow temperature ........................... 260c for 10 seconds table 2: operating range range ambient temp v cc industrial -40c to +85c 2.7v to 4.2v t2.1 75047 table 3: dc electrical characteristics symbol parameter min. typ max. unit test conditions v cc supply voltage at pins 4, 14, 15, 16 2.7 3.3 4.2 v i cc supply current @ p out = 23 dbm at v cc = 3.3v 400 ma i cq v cc quiescent current 150 ma i off shut down current <1. 0 a v reg reference voltage for recommended application 2.95 3.1 v t3.0 75047 downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 6 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company table 4: ac electrical characteristics for configuration 1,2 symbol parameter min typ max unit f l-u frequency range 4.9 5.9 ghz linearity output power with <3% evm at 54 mbps ofdm signal when operating at 3.3v v cc 20 dbm output power level with 802.11a mask compliance across 4.9-5.8 ghz 23 dbm output power level with 802.11n, ht40 mask com- pliance across 4.9-5.8 ghz 20 dbm g gain over band (4.9-5.1 mhz) 33 db gain over band (5.3-5.5 mhz) 31 db gain over band (5.7-5.8 mhz) 27 db det power detector output voltage range 0.5 2.0 v det_ref power detector output reference 0.5 0.6 v 2f, 3f, 4f, 5f harmonics at 22 dbm, without trapping capacitors -50 dbc t4.1 75047 1. performance is only valid using the recommended schematic. v cc = 3.3v, v reg = 2.95, temperature = 25oc 2. evm is measured with equalizer channel estimation set to sequence only. downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 7 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, v reg1,2 = 2.95v unless otherwise noted figure 3: s-parameters 1278 s-parms.0.1 - 40 - 35 - 30 - 25 - 20 - 15 - 10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s11 (db) frequency (ghz) s11 versus frequency -80 -70 -60 -50 -40 -30 -20 -10 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s12 (db) frequency (ghz) s12 versus frequency -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s21 (db) frequency (ghz) s21 versus frequency -40 -35 -30 -25 -20 -15 -10 -5 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 s22 (db) frequency (ghz) s22 versus frequency downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 8 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company typical performance characteristics test conditions: v cc = 3.3v, t a = 25c, v reg = 2.95v unless otherwise specified evm for 54 mbps operation figure 4: evm versus output power, measured with equalizer channel estimation set to sequence only figure 5: power supply current versus output power 1278 f4.2 0 1 2 3 4 5 6 7 8 9 10 5 6 7 8 9 101112131415161718192021222324 evm ( ) output power (dbm) evm versus output power 4.920 ghz 5.180 ghz 5.500 ghz 5.850 ghz 1278 f5.3 150 160 170 180 190 200 210 220 230 240 250 260 270 280 290 300 310 320 330 340 350 360 370 380 390 400 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 supply current (ma) output power (dbm) supply current versus output power 4.920 ghz 5.180 ghz 5.500 ghz 5.850 ghz downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 9 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company figure 6: detector voltage versus output power figure 7: power gain versus output power 1278 f6.3 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 0 1 2 3 4 5 6 7 8 9 10111213141516171819202122232425 detector voltage (v) output power (dbm) detector voltage versus output power 4.920 ghz 5.500 ghz 5.500 ghz 5.850 ghz 1278 f7.3 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 power gain (db) output power (dbm) power gain versus output power 4.920 ghz 5.180 ghz 5.500 ghz 5.850 ghz downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 10 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company figure 8: pae versus output power table 5: 802.11a 6mbps ofdm mask compliance power frequency (ghz) 802.11a 6mbps ofdm mask compliance power (dbm) 4.920 24 5.180 23.8 5.500 23.5 5.805 23 t5.0 75047 1278 f9.1 0 1 2 3 4 5 6 7 8 9 10 11 12 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 pae ( ) output power (dbm) pae versus output power 4.920 ghz 5.180 ghz 5.500 ghz 5.500 ghz downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 11 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company figure 9: recommended schematic for high-power 802.11a application vcc 50 100 pf rfin vref 0.1 f 0-0.5mm (0-20 mil) 10 2 5 6 7 8 9 11 12 16 15 14 13 3 4 1 rfout det_ref det 10 pf 10 pf 25 50 * distance from the edge of the package to the edge of the 0.3 pf capacitor = 0.89 mm (35 mil) **capacitor is centered on the edge of the output patch bias circuit 1278 schematic.0.7 0.3 pf* test conditions v reg = 2.95v v cc =3.3v 0 1.8 pf 10 f 0.1 f 0.5 pf ** 2.03mm x 1.52 mm (80 mil x 60 mil) 0.1 f 3.3 pf downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 12 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company product ordering information valid combinations for sst11lp12 sst11lp12 -qcf sst11lp12 evaluation kits sst11lp12 -qcf-k note: valid combinations are those products in mass production or will be in mass production. consult your sst sales representative to confirm availability of valid combinations and to determine availability of new combi- nations. sst 11 lp 12 - qcf xx xx xx - xxx environmental attribute f 1 = non-pb / non-sn contact (lead) finish: nickel plating with gold top (outer) layer package modifier c = 16 contact package type q = wqfn product family identifier product type p = power amplifier voltage l = 3.0-3.6v frequency of operation 1 = 4.9-5.8 ghz product line 1 = rf products 1. environmental suffix f denotes non-pb/ non-sn solder. sst non-pb/non-sn solder devices are rohs compliant. downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 13 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company packaging diagrams figure 10: 16-contact very-thin quad flat no-lead (wqfn) sst package code: qc note: 1. complies with jedec jep95 mo-220j, variant weed-4 except external paddle nominal dimensions. 2. from the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch. 3. the external paddle is electrically connected to the die back-side and possibly to certain v ss leads. this paddle can be soldered to the pc board; it is suggested to connect this paddle to the v ss of the unit. connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. untoleranced dimensions are nominal target dimensions. 5. all linear dimensions are in millimeters (max/min). 16-wqfn-3x3-qc-0.3 1.7 0.5 bsc see notes 2 and 3 pin 1 0.300.18 0.075 1.7 0.2 0.05 max 0.450.35 0.800.70 pin 1 top view bottom view side view 1mm 3.00 0.075 3.00 0.075 downloaded from: http:///
?2012 silicon storage technology, inc. ds75047a 01/12 14 4.9-5.9 ghz high-linearity power amplifier sst11lp12 data sheet a microchip technology company table 6: revision history revision description date 00 ? s71278: sst conversion of data sheet gp1112 jan 2005 01 ? corrected the spectrum mask value in product description on page 2 to read 802.11a ? corrected the solder reflow temperature under absolute maximum stress ratings on page 5 ? updated sales and marketing contact information ? changed vqfn to wqfn ? updated product ordering information ? updated table 4 on page 6. jan 2006 02 ? updated document status from preliminary specifications to data sheet mar 2008 03 ? revised gain values in features and product description on page 2 and in table 4 on page 6 ? updated contact information feb 2009 04 ? updated features, table 3, table 4, table 5, and figures 4-9 to indicate improved rf performance. dec 2010 a ? updated data plots to reflect evm measurements with equalizer chan- nel estimation set to sequence only ? updated table 2 on page 5 and table 4 on page 6 ? applied new document format ? released document under letter revision system ? updated spec number from s71278 to ds75047 jan 2012 ? 2012 silicon storage technology, incCa microchip technology company. all rights reserved. sst, silicon storage technology, the sst logo, superflash, mtp, and flashflex are registered trademarks of silicon storage tech- nology, inc. mpf, sqi, serial quad i/o, and z-scale are trademarks of silicon storage technology, inc. all other trademarks and registered trademarks mentioned herein are the property of their respective owners. specifications are subject to change without notice. refer to www.microchip.com for the most recent documentation. for the most current package drawings, please see the packaging specification located at http://www.microchip.com/packaging. memory sizes denote raw storage capacity; actual usable capacity may be less. sst makes no warranty for the use of its products other than those expressly contained in the standard terms and conditions of sale. for sales office locations and information, please see www.microchip.com. silicon storage technology, inc. a microchip technology company www.microchip.com isbn:978-1-61341-948-9 downloaded from: http:///

▲Up To Search▲

Price & Availability of SST11LP12-QCF

	To Download SST11LP12-QCF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .